Sung Kyu Jang (Korea Electronics Technology Institute)

Jong Hyun Choi (Korea Electronics Technology Institute)

Hyeongkeun Kim (Korea Electronics Technology Institute)

Sung Kyu Jang (Korea Electronics Technology Institute)

Song Minseop (Korea Electronics Technology Institute)

Jihun Kim (Korea Electronics Technology Institute)

Hyo Eun Kim (Korea Electronics Technology Institute)

Seul-Gi Kim (Korea Electronics Technology Institute)

Jong Hyun Choi (Korea Electronics Technology Institute)

Hyeongkeun Kim (Korea Electronics Technology Institute)

​Mass spectrometry has become a highly effective analytical instrument in the field of semiconductor processing, facilitating real-time monitoring of thin film deposition processes. In the field of semiconductor fabrication, precise control of gas-phase chemistry is imperative for ensuring the uniformity of film quality and the attainment of the desired material properties. This study investigated the gas-phase chemistry during atomic layer deposition (ALD) of magnesium oxide films from bis(ethylcyclopentadienyl)magnesium [Mg(EtCp)₂] across substrate temperatures of 100 to 300°C with controlled purge sequences. In-situ time-of-flight mass spectrometry continuously monitored gas-phase species throughout the ALD process. Mass spectrometric data were collected across m/z range of 10-200, capturing precursor molecular ions and fragmentation products. Mg(EtCp)₂ exhibited distinct decomposition patterns at different temperature ranges. Multivariate data analysis identified specific mass fragments from precursor decomposition and gas-phase products. Temperature variations resulted in observable changes in precursor decomposition behavior, while purge time modifications affected the detected gas-phase species composition. Real-time monitoring of chemical reactions during the ALD process has been demonstrated to facilitate process optimisation and quality control in the context of semiconductor manufacturing.