여름정기학술대회
2022여름초록
발표자 및 발표 내용
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| Brief Oral Presentation 발표신청 |
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주저자
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공동저자
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접수자
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Depth profiling
analysis using ToF-SIMS has widely been performed to obtain the information of
multi-layered organic samples. The depth profiling of the organic sample has
generally been analyzed by using a gas cluster ion beam (GCIB) as a sputter ion
beam and a liquid metal ion beam (LMIB) as an analysis ion beam. However, the
ordinary ToF-SIMS analysis shows lots of unnecessary secondary ion signals are
observed in the low mass region due to the high energy of the anlaysis ion beam
and a result of the secondary ionization process. As a matter of fact, this
makes it difficult to assign an ion signal in a secondary ion mass spectrum and
a depth profile. In order to solve the difficulties for the surface analysis of
an organic sample, we used a nano second UV laser (λ = 355 nm) as an analysis
mode. Because most of OLED materials contain a chromophore which absorb UV
light, so it can be easily ablated and ionized by laser pulse.
Here, we
performed the depth profiling analysis of 50 nm TAPC monolayer sample using
laser desorption ionization (LDI) and home-built Ar-GCIB. By controlling
parameters of LDI, we found an optimal analysis condition that analyzed OLED
sample with less damage and by taking a GCIB as a sputter, we tried to reach
below ~ 1 nm resolution as an optimal sputtering of OLED materials. The depth
profile was plotted as the integral value of the parent ion peak as a function
of the number of scan. The depth resolution of TAPC monolayer was about 1.78 nm
per point. The depth profiling of an OLED material could be successfully and
more easily analyzed using GCIB-LDI ToFMS system. And also, Ar-GCIB has been
integrated in LDI-ToFMS from ASTA to realize our prototype system. We hope the
capability of this depth profiling analysis will be demonstrated for real
organic devices in the near future.
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